t4 - lds -0 276 -2, rev . 1 (12 1224 ) ?201 2 microsemi corporation page 1 of 6 2n3498 u4 thru 2n3501 u4 available on commercial versions npn silicon transistor qualified per mil - prf - 19500/3 66 qualified levels : jan, jantx , and jantxv description this family of 2n3498 u4 through 2 n350 1 u4 epitaxial planar transistors are military qualified up to a jan txv level for high - reliability applications . these devices are also available in to - 39 and to -5 packaging. microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both throug h - hole and surface - mount packages. u4 package also available in : to - 39 (to - 205ad) package ( leaded) 2n3 498 C 2n350 1 to -5 package ( long - leaded ) 2n3 498 l C 2n350 1l important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 2n3 498 through 2n3 50 1 number series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/366. (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? general purpose transistors for medium power applications requiring high frequency switching . ? l ow package profile. ? military and other high - reliability applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3 4 98 u4 2n3499 u4 2n3 50 0 u4 2n3501 u4 unit collector - emitter voltage v ceo 10 0 1 50 v collector - base voltage v cbo 10 0 150 v emitter - base voltage v ebo 6.0 6.0 v collector current i c 500 300 ma thermal resistance junction - to - ambient r ? ja 175 o c/w thermal resi stance junction - to - case r ? jc 15 o c/w total power dissipation @ t a = +25 c (1) @ t c = + 25 c (2) p t 1 .0 4 .0 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. see figure 1 . 2. see figure 2 . downloaded from: http:///
t4 - lds -0 276 -2, rev . 1 (12 1224 ) ?201 2 microsemi corporation page 2 of 6 2n3498 u4 thru 2n3501 u4 mechanical and packaging ? case: hermetically sealed, aluminum nitride (aln) ceramic body with gold over nickel pl ated kovar lid. ? terminals: gold over nickel plated surface mount terminations. ? marking: part number, date code, manufacturers id. ? polarity: see package dimensions. ? tape & reel option: standard per eia - 481d. consult factory for quantities. ? weight: 0 .125 grams (125 milligrams) . ? see p ackage d imensions on last page. part nomenclature jan 2n3 498 u4 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs comp liance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance i ceo c ollector cutoff current, base open i cex c ollector cutoff current, circuit between base and emitter i ebo e mitter cutoff current, collector open h fe c ommon - emitter static forward current transfer ratio v ceo c ollector - emitter voltage, base open v cbo c ollector - emitter voltage, emitter open v ebo e mitter - base voltage, collector open downloaded from: http:///
t4 - lds -0 276 -2, rev . 1 (12 1224 ) ?201 2 microsemi corporation page 3 of 6 2n3498 u4 thru 2n3501 u4 electrical characteristics @ t a = +25 c, unless otherwise noted characteristic symbol min. max. unit of f characteristics collector - emitter breakdown voltage i c = 10 ma , pulsed 2n3498 u4 , 2n3499 u4 2n3500 u4 , 2n3501 u4 v (br) ceo 100 150 v collector - base cutoff current v cb = 50 v v cb = 75 v v cb = 10 0 v v cb = 15 0 v 2n3498 u4 , 2n3499 u4 2n3500 u4 , 2n3501 u4 2n3498 u4 , 2n3499 u4 2n3500 u4 , 2n3501 u4 i cbo 50 50 10 10 na na a a e mitter -base cutoff current v eb = 4. 0 v v eb = 6. 0 v i ebo 25 10 na a on characteristic s (1) forward - current transfer ratio i c = 0. 1 ma , v ce = 10 v i c = 1. 0 ma , v ce = 10 v i c = 10 ma , v ce = 10 v i c = 15 0 ma , v ce = 10 v i c = 30 0 ma , v ce = 10 v i c = 50 0 ma , v ce = 10 v 2n3498 u4 , 2n3500 u4 2n3499 u4 , 2n3501 u4 2n3498 u4 , 2n3500 u4 2n3499 u4 , 2n3501 u4 2n3498 u4 , 2n3500 u4 2n3499 u4 , 2n3501 u4 2n3498 u4 , 2n3500 u4 2n3499 u4 , 2n3501 u4 2n3500 u4 2n3501 u4 2n3498 u4 2n3499 u4 h fe 20 35 25 50 35 75 40 100 15 20 15 20 120 300 collector - emitter sa turation voltage i c = 10 ma , i b = 1. 0 ma i c = 30 0 ma , i b = 30 ma i c = 15 0 ma , i b = 15 ma all types 2n3498 u4 , 2n3499 u4 2n3500 u4 , 2n3501 u4 v ce(sat) 0.2 0.6 0.4 v base- emitter saturation voltage i c = 10 ma , i b = 1. 0 ma i c = 30 0 ma , i b = 30 ma i c = 15 0 ma, i b = 15 ma all types 2n3498 u4 , 2n3499 u4 2n3500 u4 , 2n3501 u4 v be(sat) 0.8 1.4 1.2 v dynami c characteristics forward current transfer ratio, magnitude i c = 20 ma , v ce = 20 v, f = 10 0 mhz |h fe | 1.5 8.0 output capacitance v cb = 10 v, i e = 0, 10 0 kh z < f < 1.0 mhz 2n3498 u4 , 2n3499 u4 2n3500 u4 , 2n3501 u4 c obo 10 8.0 pf inpu t capacitance v eb = 0. 5 v, i c = 0, 10 0 kh z < f < 1.0 mhz c ibo 80 pf (1) pulse test: p ulse w idth = 300 s, d ut y c ycl e < 2.0%. downloaded from: http:///
t4 - lds -0 276 -2, rev . 1 (12 1224 ) ?201 2 microsemi corporation page 4 of 6 2n3498 u4 thru 2n3501 u4 electrical characteristics @ t a = +25 c, un less otherwise noted switchin g characteristics characteristic symbol min. max. unit turn -on time v eb = 5 v; i c = 15 0 ma ; i b1 = 15 ma t on 115 ns turn - of f time i c = 15 0 ma ; i b1 = i b2 = - 15 ma t off 1150 ns saf e operatin g area (see soa figure and reference mil - std - 750 method 3053 ) dc tests t c = +25 o c, t r > 10 ns; 1 cycle , t = 1. 0 s test 1 v ce = 10 v, i c = 50 0 ma 2n3498 u4 , 2n3499 u4 v ce = 16.6 7 v, i c = 30 0 ma 2n3500 u4 , 2n3501 u4 test 2 v ce = 50 v, i c = 10 0 ma al l types test 3 v ce = 80 v, i c = 40 ma al l types clamped switching t a = +25 o c test 1 i b = 85 ma , i c = 50 0 ma 2n3498 u4 , 2n3499 u4 i b = 50 ma , i c = 30 0 ma 2n3500 u4 , 2n3501 u4 v ce collector to emitter voltage (volts) maximum s afe o perating a rea i c collector current (milliamperes) downloaded from: http:///
t4 - lds -0 276 -2, rev . 1 (12 1224 ) ?201 2 microsemi corporation page 5 of 6 2n3498 u4 thru 2n3501 u4 grap hs t c (c) (case) figure 1 derating for all devices (r jc ) time (s) figure 2 thermal i mpedance g raph (r jc ) dc operation maximum rating (w) theta ( o c/w) downloaded from: http:///
t4 - lds -0 276 -2, rev . 1 (12 1224 ) ?201 2 microsemi corporation page 6 of 6 2n3498 u4 thru 2n3501 u4 package dimensions notes: 1. dimensions are in inches. 2. millimeter equivalents are given for general informat ion only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions ltr inch millimeters min max min max bl 0.215 0.225 5.46 5.72 bw 0.145 0.155 3.68 3.94 ch 0.049 0.075 1.24 1.91 lh 0.0 2 0.51 lw1 0.135 0.145 3.43 3.68 lw2 0.047 0.057 1.19 1.45 ll1 0.085 0.125 2.16 3.1 8 ll2 0.045 0.0 75 1.14 1. 91 ls1 0.070 0.095 1.78 2.41 ls2 0.035 0.048 0.89 1.2 2 q1 0.03 0 0.070 0.76 1.78 q2 0.02 0 0.035 0.51 0.8 9 terminal 1 collector 2 base 3 emitter downloaded from: http:///
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